发明名称 FIELD EFFECT TRANSISTOR DRIVE CIRCUIT
摘要 PURPOSE:To prevent unbalance at light load when plural field effect transistors (TR) are used by connecting a resistor circuit between a drain of a field effect TR and a gate circuit so as to improve the unsaturated state when a pulse width is narrow. CONSTITUTION:A resistor is connected between a drain D and a gate G of a resistor circuit 3. The resistance value of the resistor circuit 3 is sufficiently larger than the impedance value of the signal source 2. In connecting said resistor 3 between the drain D and gate G of the field effect TR1, a drain voltage is fed to the gate G through the resistor circuit 3. When the field effect TR1 is turned on and the TR1 is in saturated state, the drain voltage is low and the TR is activated so as to lower the gate voltage and if the TR is in unsaturated state, the drain voltage is high, the gate voltage is increased so as to saturate the TR more. As a result, the degree of the unsaturation is made uniform. Then even if plural field effect TRs are used, the field effect TRs are balanced.
申请公布号 JPS60242722(A) 申请公布日期 1985.12.02
申请号 JP19840099565 申请日期 1984.05.17
申请人 TDK KK 发明人 ISHIZAKI YOSHIFUMI
分类号 H03K17/687;H03K17/12 主分类号 H03K17/687
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