| 摘要 |
PURPOSE:To realize excellent ohmic characteristics by forming first and second semiconductor layers so that both ends of a two-element electron gas layer are exposed to a side wall and shaping a source electrode and a drain electrode so as to be brought into contact with both ends exposed of the two-element electron gas layer. CONSTITUTION:A source electrode 5 and a drain electrode 6 are brought into contact with and formed to both ends 10a, 10b of a two-element electron gas layer 10 induced to a section adjacent to a hetero-junction 9 in a GaAs layer 2, thus extremely reducing ohmic contact resistance. The dispersion of ohmic contact resistance resulting from the oxidation of the surface of an n-type AlxGa1-xAs layer 3 or its own properties as seen in conventional devices can be minimized. Accordingly, an n-type GaAs layer, etc. need not be shaped onto the n-type AlxGa1-xAs layer 3 as seen in conventional devices, thus eliminating the need for the etching of the n-type GaAs layer, then making the manufacture of a HEMT easier than conventional devices. |
