| 摘要 |
PURPOSE:To prevent the generation of damage of a substrate by a method wherein a side wall is formed without completely etching a surface oxide film in a MOSFET of off-set structure. CONSTITUTION:A poly Si film is formed after a gate oxide film (SiO2) 12 is formed on the surface of the Si substrate 11, and a gate electrode 13 is formed by patterning them. Next, impurity layers 14 and 14 are formed on the substrate on both sides of the gate electrode 13 by ion implantation; thereafter, an SiO2 film 15 is formed over the whole surface. After a nitride film 16 is formed over this SiO2 film 15, a poly Si film 17 is deposited thereon, and side walls 18 and 18 are formed on both sides of the gate electrode 13 by etching this film through RIE. This manner enables the nitride film 16 to be utilized as the stopper at the time of etching the poly Si, resulting in no etching removal of the surface SiO2 film at the time of side wall formation. Therefore, damage to the substrate can be prevented. |
