| 摘要 |
PURPOSE:To enable ultra-high speed operation by modulating carriers in a channel to one-dimensional free state from a three-dimensional free state. CONSTITUTION:Fine channels C containing two-dimensional electron gas channels 2DEG are formed into each V-shaped groove extending between a source and a drain by the spreading of a depletion layer 15 under a gate electrode 14 for a third semiconductor layer 13. Several channel C is confined to the bottoms of the V-shaped grooves by spreading the depletion layer 15 in the direction that respective channel C is narrowed, the direction toward the bottoms of the V-shaped grooves, by deepening applied voltage to the gate electrode 14 to a negative value as shown in a chain line, and the channels are confined into the two-dimensional electron gas layers 2DEG and to the narrow sections of the V-shaped grooves, and can be controlled up to one- dimensional state in the direction of extension of the V-shaped grooves. |
