| 摘要 |
<p>PURPOSE:To improve efficiency without making the manufacturing cost of an element higher than a conventional element by forming p-n junction element structure by a wide forbidden band width material from which a substrate as an optical absorber is removed. CONSTITUTION:A p pole GaAlAs layer 2 in 100mum is formed onto a p-type 100 GaAs substrate 1 by using a normal slow-cooling liquid phase epitaxial growth method, and a growth liquid is changed and an n-type GaAlAs layer 3 in 30mum is shaped. Crystal growth is completed, the whole surface of the p-type GaAs substrate 1 is removed by an ammonia-hydrogen peroxide group etchant, and an n side electrode 4 and a p side electrode 5 are formed. The p side electrodes 5 are shaped in dotted partial electrodes at that time. Accord ingly, beams colliding with sections except the electrodes in beams, which are emitted on a p-n junction interface and in the p layer and move forward to a lower section, can mostly be extracted from an upper surface or a side sur face.</p> |
