| 摘要 |
PURPOSE:To enable the formation of an extremely thin active layer by implanting arsenic ions after covering the surface of a semiconductor substrate with a thin film of tin during a process of ion implantation of N-type impurity. CONSTITUTION:An Sn film 2 of 50nm thick is vapor-deposited over the whole surface of a semi-insulating GaAs substrate 1 and then a CVD SiO film 3 is deposited on that to 200nm. Only the SiO2 film 3 of the region for forming a device is removed selectively, after which As ions 10 is implanted into the overall surface to 8X10<12>cm<-2> by 110 keV. Consequently the Sn atoms only in the device forming region are recoil-implanted to form an active layer 4. Then it is possible to form the active layer which has the shallowness of 20-30nm which is difficult to be attained by a conventional method and further has a high carrier concentration. |
