| 摘要 |
PURPOSE:To stabilize bubble driving characteristics and to implement high performance of a magnetic bubble memory device, by measuring the maximum value and the minimum value of the magnetic resistance of a magnetic thin film, which is deposited on a substrate at various temperatures, and depositing the magnetic thin film at the temperature region, in which the ratio between the maximum value and the minimum value is in the desired range. CONSTITUTION:An upper limit line A and a lower limit line B of the maximum magnetic resistance Hcmax and the minimum magnetic resistance Hcmin of deposited permalloy are at the lowest value at about 340 deg.C. The ratio of magnetic resistance 1 is increased at temperatures lower or higher than said value. The rate of increase of the lower limit line B is higher than that of the upper limit line A. The 'dispersion' in ratio of magnetic resistance of a permalloy film, which is evaporated at 340 deg.C is 0.3 or less. Whereas the 'dispersion' in ratio of magnetic resistance of the permalloy film, which is evaporated at 300 deg.C becomes 3 or more. When the permalloy film is used in a driving pattern of a magnetic bubble memory element, the temperature of a GGG substrate is made to be 320-360 deg.C and the magnetic characteristics in use can be stabilized.
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