Dynamic type semiconductor memory device.

摘要

In a dynamic type semiconductor memory device, a shift resistor holds data including only one at <<1>> and remaining stages are all at <<0>>. The data is circulated and selects a word line sequentially by the <<1>> output of the data to carry out a refresh operation for the memory device. A set up circuit, when an output of a specified stage of the shift register is <<1>>, makes all outputs of remaining stages <<0>>, and when all outputs of all stages of the shift register are <<0>>, makes an output of a specified stage of the register <<1>>.