| 摘要 |
PURPOSE:To analyze quantitatively materials having a wide range of film thickness or layer thickness with high accuracy and to measure simultaneously the thickness thereof by adding correction factors with the film thickness as a variable to a ZAF method. CONSTITUTION:The ratio L of the energy of incident electrons with respect to the electron energy passing through the film or layer is first assumed. An element concn. Ci is then determined by defining the correction factors fZ, fA, fF of bulk ZAF as 1 and assuming the correction factor Gi of the thin film. The correction factor FZAF of ZAF and the correction factor Gi of the thin film are then calculated by using the Ci value and again the concn. Ci is determined. The operation is repeated until the Ci converges. The sum of the Ci is calculated and whether the sum is substantially approximate to 1 or not is judged. The value L is assumed again and the Ci is determined again if the sum is not approximate to 1. As a result, the concn. Ci of the compsn. and the value L which is the function of the film thickness are determined. |
