| 摘要 |
PURPOSE:To obtain a static induction thyristor (SIT) having ideal current saturation characteristics, by connecting a first channel between source and drain region to a second channel between source and gate regions in the vicinity of the source region. CONSTITUTION:An N<->-type well 102 is provided on a P-type substrate 101. A first channel 111 formed by the well 102 between an N<+>-type source region 103 and an N<+>-type drain region 104 is spaced from a second channel 112 between a P<+> type gate region 105 and a source region 103 by an extremely small distance because the channels 111 and 112 intersect in front of the source region 103. The resistance between the source region 103 and the inherent region 110 in which a saddle-point potential barrier exists becomes therefore so small that a large inherent transconductance peculiar to an SIT can be utilized as it is. The potential barrier of the inherent gate region 110 is controlled in its potential by the gate region 105 only. The drain current thereby presents ideal saturation characteristics to the drain voltage. |
