| 摘要 |
PURPOSE:To constitute an excellent surface acoustic wave device to a ferroelectric thin film whose orientation is formed in the state of disorder by applying polarization processing to a part of region of the ferroelectric thin film in a direction of thin film face and providing an exciting electrode to the region. CONSTITUTION:A PLZT epitaxial thin film 22 using a PLZT as a target and formed to a sapphire C plane substrate 21 by sputtering is oriented in the face [111] to the substrate 21 and the fatial distribution of a crystallographic anisotropic axis is scattered in three directions. Polarization processing electrodes 23a-23c are fitted onto the thin film 22, they are heated higher than the Curie point and subject to gradual cooling while an electric field is applied, then regions 24a, 24b of the thin film 22 are polarized and the anisotropic axes are arranged. A surface wave is excited by fitting reed screen electrodes 11a, 11b to the regions 24a, 24b, allowing to constitute an excellent surface acoustic wave device.
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