| 发明名称 |
Tailoring of via-hole sidewall slope in an insulating layer. |
| 摘要 |
<p>A method of selectively tailoring the slope of via hole sidewalls of insulating layers of integrated circuits. A first insulator layer (12) (in which the vias are to be formed) is covered by a removable layer (14), and the two layers are isotropically etched. By varying the thickness of the removable layer (14) with respect to that of the insulator layer (12), the slope of the via hole sidewalls can be controlled.</p> |
| 申请公布号 |
EP0188735(A1) |
申请公布日期 |
1986.07.30 |
| 申请号 |
EP19850115907 |
申请日期 |
1985.12.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAMS, ALLAN DAVID;BAUSMITH, ROBERT CROWELL;HOLLAND, KAREY LYNN;HOLLAND, STEVEN PAUL |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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