发明名称 PRODUCTION OF SINGLE CRYSTAL OF VOLATILE COMPOUND SEMICONDUCTOR
摘要 PURPOSE:To prevent precipitation of a volatile element on the end face of the high-temperature side of transparent quartz rod, and to observe clearly the conditions of single crystal growth, by attaching a cap having a transparent quartz window through a heat insulating material to the end face of a high-temperature side of the transparent quartz rod, and inserting the rod into a furnace in a state wherein the gap between the end face and the cap is made air-tight. CONSTITUTION:The cap 22 having a transparent quartz window part having good absorption infrared radiation energy is attached through the quartz rod 17 and the heat insulating material 20 to the end face of the transparent quartz rod 17 at the side inserted into the container 16, for observing the conditions of crystal growth in the crystal growth container 16. The gap 21 between the end face of the quartz rod 17 and the cap 22 is constructed in an air-tight structure, so that the atmosphere gas 18 in the container is not sent to the gap. When the observing device having the structure is fixed to the container 16 and crystal growth is started, the atmosphere gas 18 is filled with the component vapor of volatile element of crystal raw material which is passed through the liquid sealing agent 12 and vaporized. But the cap 22 absorbs infrared radiation energy and kept at high temperature, so component vapor of the volatile element will not precipitate, and the conditions of crystal growth can be observed without causing clouding.
申请公布号 JPS61168590(A) 申请公布日期 1986.07.30
申请号 JP19850007886 申请日期 1985.01.19
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TATSUMI MASAMI;KOTANI TOSHIHIRO;SAWADA SHINICHI
分类号 C30B15/26;C30B15/20;C30B27/02;H01L21/18;H01L21/208 主分类号 C30B15/26
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