| 摘要 |
PURPOSE:To prevent the occurrence of facets from an interface between an insulating film and an epitaxial semiconductor, by making one crystal plane to be a main surface of a semiconductor substrate, and specifying the orientation of a square opening part, with the other crystal plane, which crosses said crystal plane at a right angle, as a reference plane. CONSTITUTION:In a P-type silicon semiconductor wafer 11, whose (100) plane is the main surface, a (0T0) plane or a (010) plane is specified as an orientation flat. The pattern orientation of a chip 12 is specified so that (001) becomes the lateral (X) direction and (010) becomes the longitudinal (Y) direction. The shape of an opening-part pattern 13 for an island region, in which a semiconductor element is formed at one chip 12, is as follows: two sides are in parallel with the (001)-axis direction, and the other two sides are in parallel with the (010)-axis direction. When the epitaxial semiconductor layer is selectively formed on the semiconductor surface, facets and the like do not occur in an interface between the layer and the insulating film. |
