| 摘要 |
PURPOSE:To enable to form a single crystal oxide film at low temperature by growing an oxide film by molecular beam epitaxie on a silicon substrate in the state that the substrate temperature is 700 deg. or higher, the ratio of oxygen atom number to metal atoms is 4 or less and the growing is 0.5mum/hr or less. CONSTITUTION:A shroud 2 filled with liquid nitrogen, a sample heating plate 3 and injecting cells 4a-4c are provided in a high vacuum vessel 1. A silicon substrate 5 is placed on the plate 3, and Al, Mg and oxides (Sb2O3, As2O3) of The Periodic Group V are supplied from the cells 4a-4c. The oxides of The Periodic Group V become oxygen supply sources. An oxide film is formed on the substrate 5. The oxide film is single-crystallized by setting the substrate temperature to 700 deg.C or higher, the ratio of oxygen atom number to metal atoms to 4 or less and the growing speed to 0.5mum/hr or less.
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