METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BY MEANS OF PLASMA ETCHING

摘要

"Method of manufacturing a semiconductor device by means of plasma etching." A method of manufacturing a semiconductor device, in which a layer of silicon nitride (3) overlying a silicon oxide layer (4) present on a substrate (2) is etched by bringing it into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a subsgantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine or of a compound containing a halogen different from fluorine are added to this gas or gas mixture which contains fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained, which moreover, does not vary during etching.