| 摘要 |
PURPOSE:To largely enhance a withstand voltage between gate, source and gate, drain by a coating a metal gate electrode with an insulating film having an electric insulation. CONSTITUTION:A gate insulating film 202 is formed on a semiconductor substrate 201, and a silicide film 203, a metal film 204 and a silicon nitride film 205 are subsequently sequentially superposed on the film 202 and grown. Then, the films 205, 204 are selectively anisotropically etched, and a gate electrode 204a is formed. Then, impurity ions are implanted into a semiconductor substrate to form source and drain regions 207. Then, the second silicon nitride film 206 is grown on the entire surface. Subsequently, the films 206, 203 are etched to expose the source and drain regions. Then, a side wall is formed on the side of the gate. Thereafter, a thermal oxidation is formed in this state, the film 203 and an oxide film 208 on the surface of the substrate are formed. |
