| 摘要 |
PURPOSE:To insulate an separate semiconductor layers by forming an opening at the first dielectric insulating film on the main surface of a semiconductor crystal substrate, further forming the second dielectric film thereon, growing the crystal and then connecting islands of the adjacent semiconductor crystal. CONSTITUTION:An oxide film 2 is formed on the surface of a single crystal silicon substrate 1, and an opening is formed on the film. Then, the crystal is epitaxially grown from the opening, lateral crystal growth is advanced to form an epitaxial crystal 4 on the film. Then, the epitaxial crystal layer and the single substrate are electrically insulated by removing by etching the epitaxial crystal layer on the opening, and by coating the semiconductor single crystal surface of the opening with an insulating film 5 by vapor phase growth of SiO2. Then, with the epitaxial single crystal remaining on the film as growing nuclide the second epitaxial crystal growth is executed. Further, the growth is continued to connect the adjacent insular epitaxial crystals. |
