| 摘要 |
PURPOSE:To increase a binding energy of a growing film by a construction wherein a carrier gas made into plasma is introduced into a reaction tube into which a reaction gas is introduced, so as to facilitate a vapor growth on a substrate. CONSTITUTION:While substrates 14 are disposed in a reaction chamber 15 in a reaction tube 11 provided with a supply port 12 and an exhaust port 13 for a reaction gas, a plasma generator 16 is connected to the reaction chamber 15 through a window 17. Then, a mixture gas of a silane gas and a phosphorous compound is enclosed in the reaction tube 11, and simultaneously a carrier gas of argon, nitrogen or the like is made into plasma in the generator 16 and introduced into the chamber 15. The decomposition of the reaction gas is facilitated by a heat energy of a heater 5 and by the energy of the plasma. |
