| 摘要 |
PURPOSE:To prevent a leakage current between contacting holes by burying an organic polymer resin film surrounded in three-dimensional manner by an inorganic insulating film in a groove between metal wirings of a semiconductor device, thereby enhancing the weather resistance of the resin film. CONSTITUTION:The first aluminum wirings 202 are provided on a silicon substrate 201. Then, a silicon nitride film 203 is formed by a plasma chemical vapor phase growing method at 500 deg.C or lower from above the wirings. Then, an organic polymer resin film 204 is formed by a spin-ON coating film forming method. Then, it is etched until a silicon nitride film 102 is presented on the wirings 202. Thereafter, a silicon nitride film is formed by a plasma chemical vapor phase growing method thereon. Subsequently, a contacting hole is formed to form the second aluminum wirings 207. Stepwise shape can be readily flattened. |
