发明名称 |
HIGH WITHSTAND VOLTAGE MOS FIELD EFFECT SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To prevent an erroneous operation in a semiconductor device formed with two MOSFET's of different withstand voltages on the same semiconductor substrate by completely coating a low withstand voltage semiconductor region with semiconductor. CONSTITUTION:In a semiconductor device formed with a high withstand voltage MOSFETB and a low withstand voltage MOSFETC for driving the FETB on the same semiconductor substrate, the pattern of the low withstand voltage FET is completely coated wit aluminum or other semiconductor D. With the thus constructed structure, erroneous operation due to the inversion of the field of the low withstand voltage FET by the influence of the high withstand voltage FET can be prevented. |
申请公布号 |
JPS61168253(A) |
申请公布日期 |
1986.07.29 |
申请号 |
JP19850007776 |
申请日期 |
1985.01.19 |
申请人 |
SHARP CORP |
发明人 |
NAKAGAWA KIYOTOSHI;KAWANO KENZO |
分类号 |
H01L21/8234;H01L27/088;H01L29/40;H01L29/417;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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