| 摘要 |
PURPOSE:To obtain a resin composition for a photoresist having satisfactory functions such as high sensitivity and resolving power by combining an alpha- methylstyrene copolymer having specified segments with a triplet sensitizer. CONSTITUTION:A poly-alpha-methylstyrene resin composition for the photoresist is composed of an alpha-methylstyrene copolymer having segments represented by the formula (where each of m and n is an integer) and a triplet sensitizer. The ratio of diisopropenylbenzene residues in the alpha-methylstyrene copolymer to all the monomeric units in the copolymer is about 0.005-0.50. When the ratio of alpha-methylstyrene and diisopropenylbenzene residues in the copolymer is >=0.5, the copolymer may contain other monomeric units. The rays of light having >=330nm wavelength are irradiated on the film of the resin composition. The composition is made insoluble in a solvent by a cross-linking reaction caused by the irradiation, and the insoluble composition is decomposed and volatilized at a relatively low temp., so the composition is suitable for use as a photoresist. |
