| 摘要 |
An apparatus and method for infrared imaging is disclosed in which a pattern of infrared radiation is detected and stored in uniformly distributed localized states in a semiconductor. Photoemission of charge carriers from the localized states occurs only at locations where infrared photons interact with the carriers. When desired, a uniform electric field applied to the semiconductor allows for coherent transport of a pattern of remaining carriers in a direction substantially perpendicular to an outer surface to which the image is transported. A portion of the transported pattern of charge may be emitted from the outer surface of the semiconductor and utilized to produce an optical or electrical pattern corresponding to the incident infrared pattern.
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