Stacked double dense read only memory

摘要

A read only memory array of stacked IGFET devices composed of first and second sub-arrays of field effect transistors. The first sub-array of first field effect transistors is formed in a substrate. Each of the first field effect transistor devices is responsive to a polysilicon gate electrode. The second sub-array of second field effect transistors is formed in a layer of laser annealed polysilicon material which overlies the first sub-array. The gate electrodes of the first field effect transistors act as the gate electrodes of the second field effect transistors.