| 摘要 |
<p>PURPOSE:To obtain a storage which is integrated to a large degree by applying one electrode with a high potential in writing operation and with an intermediate potential in reading operation and also applying the other electrode of an FAMOS element which is applied with a control signal at a control electrode with the ground potential in the reading operation and with a constant potential between the intermediate potential and ground potential in the writing operation. CONSTITUTION:When the reading operation is performed, a power source 1 is at the intermediate potential 5V, a signal line phi is at 5V, and phi' is at 0V; and the output of an inverter 23 is 0, N-ch MOS28 is on, and outputs of inverters 14 and 17 are at 5V and 0V respectively, so that N-ch MOS22 turns off. The current amplification factor of an FET24 is increased and a contact 11 is held almost at 0V, thereby reading the drain voltage of an element 10 which indicates storage out of a sense amplifier 27 accurately. When writing operation 1 is performed, the power source 1 is at 21V and phi and phi' are at 0 and 5V respectively, and the element 28 is off. Further, phi1-phi4 area at 21V and elements 7-10 turn on; and the source-drain potential difference of the element 10 becomes smaller to suppress a leak and a punch-through through phenomenon. Consequently, normal writing operation is performed even when the channel of the FAMOS is shortened for high integration.</p> |
