PRODUCTION OF THIN ZINC SULFIDE FILM

摘要

PURPOSE:To obtain a thin zinc sulfide film having a high crystal grade by using an addition product obtd. by mixing dialkyl zinc and dimethyl selenium at an equal molar ratio as a zinc source and hydrogen sulfide as a sulfur source. CONSTITUTION:A substrate 3 is set on a susceptor 2 provided in a reaction tube 1. H2S diluted by a carrier gas is packed in a cylinder 16. The addition product formed by mixing the dialkyl zinc and dimethyl selenium at an equal ratio is sealed into a bubbler 13 and dimethyl selenium (DMSe) is sealed into a bubbler 14. The respective gaseous raw materials are diluted by the carrier gas flowing in a piping 18 and flow to the reaction furnace 1. The formation of ZnS in a vapor phase occurring heretofore in the deficiency of the thermal stability of the addition product is suppressed by using the above-mentioned addition product as the zinc source. The crystallinity of the thin ZnS film obtd. by a thermal vapor cracking method of org. metal is thus improved.