| 摘要 |
PURPOSE:To obtain the titled Al wire rod satisfying the various properties required of a bonding wire rod at low cost by incorporating prescribed amounts of Ni, Mg, Si, Fe, Cu, etc., to Al. CONSTITUTION:The Al wire rod for semiconductor device bonding consists of, by weight, 0.05-2.0% Ni, 0.2-4.0% Mg, <=0.02% Si, <=0.02% Fe, <=0.03% Cu, if necessary <=0.5% Ti and <=0.1% B, further <=1.0% of >=1 kind among Zr, Mn, and rare earth elements, and the balance Al. This wire rod has excellent characteristics as follows: high tensile strength; superior corrosion resistance; a nearly perfectly spherical shape of the ball (in case of ball bonding) and rare occurrence of variance in its size; superior heat resistance; no occurrence of constriction between the wire rod and the ball (in case of ball bonding); high strength after bonding; and such superior wire drawing workability that enables the wire drawing into an extra fine wire. |
