| 摘要 |
PURPOSE:To form a prescribed film on a substrate while preventing charged particles from having an impact upon the substrate by introducing excited molecules of gas and excimer into a film deposition chamber, where they are reacted with other substance. CONSTITUTION:Microwave voltage is applied to a microwave cavity 2 to generate plasma 1. Excited molecules and excimer produced in the plasma 1 are introduced into a film deposition chamber 30 through an introducing pipe 7. Monosilane, disilane, a silane deriv. or other gas is fed from a direction 23 through a valve 22, spouted into the treatment space 34 from a ring-shaped nozzle 21, and reacted with the excited molecules and excimer. By this reaction a high quality SiN film or the like is formed on a substrate 31. The gas introduced into the space 34 is exhausted through a valve 36 in a direction 35. By this method the film formation is carried out in a state in which charged particles exert no influence.
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