| 摘要 |
PURPOSE:To inhibit the deformation of a striped groove at a minimum by laminating a P-type GaAs protective layer set in film thickness, in which the evaporation of an exposed section in a current stopping layer is suppressed minimally, in a first growth process in a thermal cleaning process. CONSTITUTION:The film thickness of a protective layer 24 is formed in size, in which the evaporation of an exposed section 25' in a current stopping layer 25 is inhibited at a minimum in a thermal cleaning process as a post-process, and set in approximately 50-500Angstrom . A substrate 10 using a photo-resist 50 as a mask is dipped into a solution 60 having an etching rate of N>>P under beam irradiation from a light source such as a halogen lamp, and an evapora tion stopping layer 26 and the current stopping layer 25 are etched selectively to a striped shape along a laser resonator wavelength. The substrate 10 is heated at approximately 720 deg.C or higher while the substrate 10 is irradiated by arsenic molecular beams in a MBE device, thus evaporating impurities such as an oxide adhering in an etching process and the protective layer 24, the surface thereof is exposed to a striped shape. Accordingly, a striped groove 30 in depth reaching a first upper clad layer 23 is formed.
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