| 摘要 |
PURPOSE:To increase electrostatic withstanding voltage by connecting diffusion resistance regions and the diffusion resistance regions and a terminal for an external connection in parallel by diffusion resistance regions brought into contact with an Al wiring layer at one or more of positions. CONSTITUTION:Resistors inserted among terminals for an external connection are constituted by one or more of first impurity introducing regions formed into a substrate, and the first impurity introducing regions and the first impurity introducing regions and the terminals for the external connection are wired by mutually connected wiring layers and second impurity introducing regions. That is, a diffusion resistance region R is shaped to the substrate 4, an opening is bored to a cover film 5 consisting of phosphorus silicate glass (PSG) applied onto the substrate 4 on the diffusion resistance region R to expose the surface of the diffusion resistance region R, and an Aln+1 layer is applied onto the surface of the region R. |
