| 摘要 |
PURPOSE:To obtain an epitaxial layer having excellent crystallizability and an excellent interface by a method wherein a phosphorus compound is epitaxially grown in vapor phase on an arsenic compound, and also an arsenic compound is epitaxially grown in vapor-phase on the phosphorus compound using an arsenide-phosphorus compound as a buffer layer. CONSTITUTION:A buffer layer 12 is provided for the purpose of preventing (As) from being thermally dissociated when a GaAs substrate 11 is heated up to the growing temperature. AsH3 gas is added to carrier gas to accomplish the above-mentioned purpose. After the substrate 11 reached the growing temperature, PH3 gas is introduced, and then the raw gas of In and Ga are introduced. The buffer layer 12 grown through the above-mentioned procedures is an InGaAsP layer. After said buffer layer 12 is grown, an InGaP layer 13 is grown successively. It is considered suitable that the composition of said InGaP is selected in such a manner that it is turned to the In0.5Ga0.5P with which the GaAs of the substrate 11 and the InGaAs of the buffer layer 12 are lattice- matched. |
