| 摘要 |
PURPOSE:To enable obtaining a getter effect from both a main surface and a back surface by forming a crystal disturbed layer implanting Si in both the main surface and the back surface of a substrate. CONSTITUTION:Si is implanted in the main surface and the back surface of a substrate 3 and layers 2, 4 which contain much deformation in Si crystal are formed. In the main surface, an epitaxial growth layer 1 is grown on the deformation layer. By implanting Si in the main surface and the back surface of the semiconductor substrate, the deformation of Si crystal is made in both the main surface and the back surface of the substrate and if a transition element is near, the element is gettered to the deformation. By implanting Si also in the main surface as well as in the back surface, a greater gettering effect in the active region of a semiconductor device than the hitherto case wherein a getter nucleus is formed only in the back surface can be obtained. |
