ETCHING METHOD OF INSULATION FILM

摘要

PURPOSE:To enable a wiring without disconnection by making the side surface of the aperture in an etching region inclined wet-etching a lamination of plural phosphorus silicate glasses of different phosphine concentration with buffer hydrofluoric acid. CONSTITUTION:The side surface of the aperture in an etching region is made inclined by wet-etching with buffer hydrofluoric acid a lamination of plural phosphorus silicate glasses of different phosphine concentration. That is, the first layer 12 is wet-etched with buffer hydrofluoric acid from the part corresponding to the aperture of a resist film 14 and a gap 15 and the first layer 12 is etched from the upper surface and the side surface whereby a contact hole 16 the section of which is made inclined is formed.