| 摘要 |
PURPOSE:To very favor the manufacture of a semiconductor device aiming at forming into a multilayer structure or a three-dimensional structure by a method wherein the contact hole part is filled with a high-melting point metal film, and after that, another high-melting point metal film is uniformly formed on the surface of the wafer. CONSTITUTION:An insulating film 5 is formed, and after that, a contact hole 6 is formed by a photolithographic process and a dry etching process. After that, the wafer is heated at 350 deg.C in the reaction chamber of a CVD device, a tungsten film is selectively formed in the contact hole 6 using WF6 gas and H2 gas as the source gases and the contact hole 6 is filled with the tungsten film 7. After that, an excimer laser beam of ArF is irradiated on the surface of the wafer substrate in a height of about 1nm from the surface to make decomposition of the WF4d6 gas promote and WFn (n=1-5) and F radicals are formed. The F radiacal reacts with the H2 gas to form H atoms. The H atoms react with the WF6 gas and the WFn radical to form W and HF. On the basis of the reaction of W and HF, a tungsten film 8 is made to continuously grow on the tungsten film 7, wherein the contact hole 6 is being formed, and on the insulating film 5. |
