| 摘要 |
PURPOSE:To prevent the fluctuation in the resistance value of a metal coating resistor from occurring by a method wherein a metal coating resistor is shielded with an aluminium shielding region provided through the intermediary of an oxide film to cut off hydrogen fed from a nitride film. CONSTITUTION:An insulating film 102, a metal coating resistor 103 are provided on a semiconductor substrate 101 while aluminium wirings 104 coming into contact with at least a part of the metallic coating resistor 103 are provided on the insulating film 102 and then the insulating film 102 is entirely covered with an oxide film 105 by e.g. vapor growing process. Later an aluminium shield region 106 covering at least the metal coating resistor 103 is provided on the oxide film 105. Finally in order to improve the moisture resistance of aluminium, the overall surface of oxide film 105 including the aluminium shield region 106 is covered with e.g. a nitride film 107 formed by means of plasma growing process. |
