发明名称 MATNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve the performance and the reliability of a magnetic bubble element having a high level of density and a high degree of intergration, by increasing the magnetic field bias of working bias of a magnetic bubble on a minor loop transfer path formed by an iron implantation system. CONSTITUTION:An inner route corner part 8 connected to an oblique part 13 of a bubble transfer path is always formed at the replicate gate side only. For instance, a minor loop is formed by combining four linear transfer paths 6 and three inner route corner parts. Then a minor loop of a magnetic bubble element is formed by combining seven linear transfer paths 6 and six inner route corner parts. For these both loops, the oblique part 13 following the corner part 8 at the replicate gate side is always set at the replicate gate provided at the side of the crystal direction of a bubble garnet film. Thus no bad track area exists.
申请公布号 JPS61165879(A) 申请公布日期 1986.07.26
申请号 JP19850004058 申请日期 1985.01.16
申请人 HITACHI LTD 发明人 SATO TOSHIHIRO;IKEDA HITOSHI;SUZUKI MAKOTO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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