| 摘要 |
PURPOSE:To perform an erasing action by turning on a transistor added to a floating gate and therefore discharging the electric charge stored in the floating gate part. CONSTITUTION:A transistor containing a drain 9, a source 10 and a gate 11 is cut off by floating gate type memory element. Thus only the floating gate type memory containing a source 5, a drain 6, a floating gate 7 and a control gate 8 is independent effectively. Then the temporary storage of the electric charge is possible with a floating gate type memory element. While the stored electric charge of the memory element can be discharged by turning on the transistor. |
