| 摘要 |
PURPOSE:To form a shielding film in thick thickness onto the surface of a semiconductor element by using a low molecular-weight polymer solution containing a specific imide ring as a solution for shaping a polyimide film. CONSTITUTION:A low molecular-weight polymer solution containing imide rings acquired by dissolving a diamino compound consisting of a 99-80mol% A component and a 1-20mol% B component and aromatic tetracarboxylic acid ester into an inert solvent at equimol or approximately equimol and heating them is employed as a solution for shaping a polyimide film. Where aromatic 4 nuclide diamine represented by formula (1) is used as the A component, and R1 and R2 in formula represent a 1-4C alkyl group or CF3, and may be the same or different mutually. R3, R4, R5, R6 represent hydrogen, halogen or a 1-4C alkyl group, and may be the same or different mutually. Diaminosiloxane represented by formula (2) is employed as the B component, and R7 represents a bivalent organic group and R6 a monovalent organic group in formula, and (n) represents integers of 1-1,000. Accordingly, the polyimide thick film for shielding can be formed. |
