发明名称 FLOATING-GATE TYPE NONVOLATILE MEMORY ELEMENT
摘要 <p>PURPOSE:To not only project ultraviolet rays but also enable an erasing electrically on the erasing by combining a diode with a floating-gate. CONSTITUTION:A diode is combined with a floating-gate. Consequently, when a diode 7 for the floating-gate section is biassed in the opposite direction, only a memory element section is effective in the floating-gate 4, and charges can be stored temporarily as a floating-gate type nonvolatile memory element. When the floating-gate 4 section is biassed in the forward direction, on the contrary, charges stored in the memory element section can be discharged.</p>
申请公布号 JPS61166078(A) 申请公布日期 1986.07.26
申请号 JP19850006470 申请日期 1985.01.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 ARIGA RIE
分类号 G11C17/00;G11C16/04;H01L21/8247;H01L29/788;H01L29/792 主分类号 G11C17/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利