| 摘要 |
<p>PURPOSE:To store erasing and writing frequencies E/W in an EE memory for measurement by using an E/W circuit for erasing and writing actions, a counter circuit and the EE memory for measurement which stores the output of said counter circuit. CONSTITUTION:An address buffer containing address inputs A0-n, a decoder 11, an EE memory cell array 12 and an I/O buffer 16 are connected to each other. Then an E/W circuit 13 which performs electric erasion is added together with a counter circuit 14 and an EE memory cell 15 for measurement which stores the output of the circuit 14. A word line is selected within the cell 15 by the address input and at the same time a data line is also selected by an I/O circuit. Then a writing action is given to the array 12. In this case, the circuit 14 counts the E/N times for each writing frequency. The input is switched to the cell 15 from the buffer 16 and stored in the nonvolatile memory 15 for measurement.</p> |
