| 摘要 |
PURPOSE:To enable operation at high speed by forming a gate electrode in a self-alignment manner to a source contact region and a drain contact region and forming the gate length of the gate electrode being in contact with an n-type region in extremely narrow size. CONSTITUTION:A gate electrode 21 is shaped to a channel section formed to a compound semiconductor substrate 6, and a source electrode 19 and a drain electrode 20 are shaped according to a pattern while holding the gate electrode 21. High impurity-concentration contact regions 16 are formed while holding a channel region shaped to the compound semiconductor substrate coated with an insulating layer, windows are bored to an insulating layer 17, and the gate electrode 21 consisting of a gold group multilayer film is formed to the channel region through a junction layer composed of a silicide of a high melting-point metal and the source and drain electrodes 19, 20 consisting of the gold group multilayer film directly to the high impurity-concentration contact regions 16 shaped while holding the channel region. |
