| 摘要 |
PURPOSE:To switch a transistor (TR) in high speed without large-sized circuit constitution by using a field effect TR for a pre-stage TR of Darlington connection and setting a voltage value of a reverse bias power supply to a breakdown voltage or over between a base and an emitter of a post-stage TR. CONSTITUTION:In applying an ON signal, an MOSFET Q2 and a bipolar TR W1 are turned on. In turning on MOSFETs Q3, Q4, a reverse voltage of E0 is applied from a DC power supply E1 to a VG-E (voltage between (a,b)) of the Darlington TRs Q1, Q2 and the MOSFET Q2 is turned off. then the minority carrier stored in the TR Q1 is discharged rapidly and the TR Q1 is turned off. Then a field effect TR Q4 is turned off and the bipolar TR Q1 causes ava lanche breakdown for a long time to prevent thermal destruction. |
