| 摘要 |
PURPOSE:To obtain a strong output signal in a semiconductor laser by a method wherein the reflective surfaces are formed without using cleavage, the laser is constituted into a structure, which is suitable to an integration by taking out the emitted light in the direction vertical tot he substrate, and moreover, the laser is provided with a window region. CONSTITUTION:This semiconductor laser has a first GaAs semiconductor layer 11 of the thickness of 5mum, a second Al0.4Ga0.6As semiconductor layer 12 of the thickness of 5mum, a third GaAs semiconductor layer 13 of the thickness of 5mum, a fourth Al0.4Ga0.6As semiconductor layer 14 of the thickness of 5mum and a fifth GaAs semiconductor layer 15 of the thickness of 5mum, which are made to grow by crystallization on a GaAs substrate 10, and an N-type GaAs buffer layer 21, an N-type Al0.4Ga0.6As clad layer 22, a GaAs active layer 23, a P-type Al0.4Ga0.6As clad layer 24 and a P-type GaAs cap layer 25, which are made to grow by crystallization on a section 20 vertical to the crystal growth surface of the third semiconductor layer 13, and is constituted of reflec tive surfaces 26, SiO2 layers 27, a P-type electrode 28 and an N-type electrode 16, which are made on the abovementioned crystal growth layers.
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