| 摘要 |
PURPOSE:To enable a photoresist film to be removed down to a desired thickness without damaging an attached face by immersing an intermediate work into a photoresist-removing soln. and irradiating it with UV rays in a chamber filled with O2. CONSTITUTION:The intermediate work II composed of the photoresist film 2, a thin metal film 4, and an electroformed plate 5 is formed in a step for forming a stamper III. The photoresist film 2 of this work II is implanted with the metal of the film 4 by the sputtering method to make it difficult to remove the film 2 by the usual method. To solve this problem, the work II is immersed into the photoresist-removing soln. to remove most of the film 2, and it is placed in this state into the chamber filled with O2 to irradiate it with UV rays for about 15min, thus permitting the photoresist film 2 to be removed down to an intended film thickness of <=10Angstrom without damaging the attached face. |
