| 摘要 |
A semiconductor memory device having memory cells each of which stores data in the form of the width of a depletion layer, and each of which comprises a semiconductor substrate having one type of conductivity; a region having an opposite type of conductivity formed on the surface portion of the semiconductor substrate; a depletion-type channel region of the one type of conductivity formed on the region having the opposite type of conductivity; a gate insulator which is formed on the surface of the channel region; and a gate electrode formed on the gate insulator; a portion of the gate insulator having a reduced thickness, and a portion of the channel region under the thin portion of the gate insulator being surrounded by the region having the opposite type of conductivity and by the remaining portions of the channel region in the semiconductor substrate. |
