| 摘要 |
PURPOSE:To save the processes of mask fabrication and heat treatment and to obtain the profile of a desired impurity concentration by scanning the semiconductor wafer on which a thin film consisting of the impurity to be doped or a compound of the impurity and a bulk substance is formed with an electron beam, a laser beam or an X-ray beam so as to fuse only the necessary part. CONSTITUTION:A thin film 22 consisting of the impurity to be doped or the impurity and a bulk substance is formed on a surface of a semiconductor wafer 21. An electron beam 1 is deflected by an electromagnetic field and scans the wafer 21 to irradiate the thin film 22a on the part 21a in which an impurity is doped thereby fusing the part 21a of the wafer 21. The impurity is diffused to form an impurity doped layer 23. The unnecessary thin film 22 is removed by plasma etching. Instead of electron beam 1, a laser beam and an X-ray beam are available. |
