| 摘要 |
PURPOSE:To form the resist pattern having a high form ratio, a high resolution and a high oxygen plasma resistance properties with an irradiation of UV ray by applying the titled resist composed of a (co)polymer of a substd. acetylene compd. having a (substd.)silyl group and a sensitizer. CONSTITUTION:The resist film is prepared by forming on an org. high polymer film provided on a substrate to be worked, the resist film composed of the substd. acetylene (co)polymer shown by formula I wherein R1 is each a hydrogen atom, an alkyl, a (substd.)silyl groups, R2 may be the same to R1 and a weight average mol.wt. of said polymer (a photoscattering method) is >=10,000, and the sensitizer of the triplet type such as a benzophenone and a benzoin types sensitizer, preferably an anthraquinone type sensitizer shown by the formula II. The pattern is formed on a silicon contg. film through a mask by irradiating the UV ray. When the org. high polymer film under-lying said pattern is plasma- etched with oxygen, as the silicon contg. film has an excellent plasma etching resistance, the etching work with a high accuracy is obtd. |
