| 摘要 |
PURPOSE:To eliminate the instability of the uniaxial mode operation of an integrated semiconductor laser, which is due to the leakage-in of carriers, by a method wherein, in the integrated uniaxial mode semiconductor laser, the mutually different operating regions are optically coupled together with an organic material such as a polyimide or an insulating material. CONSTITUTION:A diffraction grating 2 is partially formed on an N-type InP substrate 1. An N-type In0.72Ga0.28As0.61P0.39 guide layer 3 to correspond to a luminous wavelength of 1.33mum, for example, and a non-doped In0.59Ga0.41As0.90P0.10 active layer 4 to corre spond to a luminous wavelength of 1.55mum are respectively laminated thereon in a thickness of 0.1mum from the mountain of the diffraction grating 2 and in a thickness of 0.1mum, and moreover, a P-type InP clad layer 5 is laminated in order on the grating 2. After an electrode is formed thereon, a dry etching is performed using chlorine mixed gas, whereby a groove 8 of a depth of 10mum or thereabouts is formed in the central part between a DFB region 6 having the diffraction grating 2 and a modulator 7 having the falt guide layer 3. An SiO2 layer 9 is laminated on the bottom surface of the groove 8. Then, a spin coating is performed on the SiO2 layer 9 with a polyimide 10 to form the integrated semiconductor laser into a waveguide structure. |
