BLUE COLORED LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE:To make the mass production of thin type MIS blue colored diode feasible while maintaining the evenness of element characteristics by a method wherein an impurity added zinc sulfide layer, a no-additive zinc sulfide layer and an electrode layer are successively laminated on a low resistant single crystal substrate with ohmic contact. CONSTITUTION:An impurity added zinc sulfide layer 3, a no-additive zinc sulfide layer 4 and an electrode layer 5 are successively laminated on a low resistant single crystal substrate 2 with ohmic contact 1. Around 30-60 times effect of mass production on this MIS type wafer may be anticipated by means of MOCVD process. Moreover the element characteristics of this wafer may be subject to less dispersion due to excellent reproducibility of interfacial state between light emitting layer and insulating layer as well qas excellent controlability of film thickness since said two layers may be formed continuously by MOCVD process.