| 摘要 |
PURPOSE:To make all parallel-connected transistors operate equally by a method wherein the gaps between base contacts of parallel-connected transistors and emitter regions are respectively differentiated. CONSTITUTION:Within a semiconductor integrated circuit connected in parallel with at least two or more transistors formed on a main surface of semiconductor, the gaps between base contacts of respective parallel-connected transistors and emitters corresponding thereto are differentiated from one another. In order to make two transistors respectively including an emitter region 4e and another emitter region 4d operate equally, the gap between base contact 2d and emitter region 4d shall be set up to make base resistance R2=R1+R3+ hFE.R4 as the base current Id=Ie i.e. to increase the base resistance by the wiring resistance between contacts. In other words, the gap between base contact 2d and emitter region 4d have only to be wider than that between base contact 2e and emitter region 4e by the wiring resistance between contacts. The wider gaps may apply likewise to the transistors in the other emitter regions 4a, 4b and 4c. |
